ace 14 21 m p - channel 2 0 - v mosfet ver 1.1 1 description the ace 14 21 m uses advanced trench technology to provide excellent r ds( on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. features ? low r ds (on) trench technology ? low thermal impedance ? fast switching speed applica tions ? load switches ? dc/dc conversion ? motor drives absolute maximum ratings parameter symbol limit unit s drain - so urce voltage v ds - 20 v gate - source voltage v gs 8 v continuous drain current a t a =25 i d - 8.8 a t a = 70 - 7 pulsed drain current b i dm - 40 a continuous source current (diode conduction) a i s - 5 a power dissipation a t a =25 p d 3 w t a = 70 1.9 op erating temperature / storage temperature t j /t stg - 55~150 thermal resistance ratings parameter symbol maxim um units maximum junction - to - ambient a t <= 10 sec r ja 40 c/w steady state 90 notes a. surface mounted on 1? x 1? fr4 board. b. pulse w idth limited by maximum junction temperature
ace 14 21 m p - channel 2 0 - v mosfet ver 1.1 2 packaging type dfn2*2 - 6 l ordering i nformation ace 1421 m mn + h m n : dfn2*2 - 6l pb - free halogen - free
ace 14 21 m p - channel 2 0 - v mosfet ver 1.1 3 electrical characteristics t a =25 , unless otherwise specified. parameter symbol test conditions min typ max unit static g at e - s o u rc e t hre s h ol d v o l ta g e v gs(th) v d s = v gs , i d = - 2 5 0 u a 0.4 v g at e - b o d y l e a k a g e i gss v d s = 0 v , v g s = 8 v 100 na zero g ate v o l ta g e dra i n c u rre n t i dss v d s = 24 v , v g s = 0 v - 1 ua v d s = - 16 v , v g s = 0 v , t j = 5 5 c - 25 o n - st a te d r a i n c u rre n t i d(o n) v d s = - 5 v , v g s = - 4.5 v - 12 a d r a i n - s o ur c e on - re s i s ta n c e r ds(on) v g s = - 4.5 v , i d = - 7 a 26 m v g s = - 2 . 5 v , i d = - 5.6 a 34 for w ard t r a n sco n d u c ta n c e g fs v d s = - 15 v , i d = - 7 a 8 s d i o d e for w ard v o l ta g e v sd i s = - 2.5 a , v g s = 0 v 0.68 v d y namic t ot a l g ate ch a r ge q g v d s = - 10 v , v g s = - 4 . 5 v , i d = - 7 a 30 nc g at e - s o u rc e c h arge q gs 4 g at e - d r a i n c h arge q gd 6 t urn - o n d el ay t i m e t d(on) v d s = - 10 v , r l = 1.4 , i d = - 7 a , v g e n = - 4.5 v , r g e n = 6 6 ns r i s e t i m e t r 12 t urn - o f f de l ay t i m e t d(off) 85 fa l l t i m e t f 35 in p ut cap a c i ta n c e c iss v d s = - 15 v , v g s = 0 v , f = 1 m h z 1435 pf o ut p ut cap a c i ta n c e c oss 126 re v er s e t r a n s f er capac i ta n c e c rss 113 note : a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, no t subject to production testing
ace 14 21 m p - channel 2 0 - v mosfet ver 1.1 4 typical performance characteristics id - drain current (a) v gs - gate - to - source voltage (v) 1. on - resistance vs. drain current 2. transfer characteristics v gs - gate - to - source voltage (v) vs d - source - to - d rain voltage (v) 3. on - resistance vs. gate - to - source voltage 4. drain - to - source forward voltage vd s - drain - to - source voltage (v) vds - drain - to - source voltage (v) 5. output characteristics 6. capacitance
ace 14 21 m p - channel 2 0 - v mosfet ver 1.1 5 typical performance characteristics qg - total gate charge (nc) tj ? junction temperature(c) 7. gate charge 8. normalized on - resistance vs junction temperature vd s drain to source voltage (v) t1 time (sec) 9. safe operating area 10. single pulse maximum power dissipation t1 time (sec) 11. normalized thermal transient junction to ambient
ace 14 21 m p - channel 2 0 - v mosfet ver 1.1 6 packing informati on dfn2*2 - 6pp unit: mm symbols dimensions in millimeters diensions in inches min nom max min nom max a 0.50 0.55 0.60 0.020 0.022 0.024 a1 0.00 0.05 0.000 0.002 b 0.25 0.30 0.25 0.010 0.012 0.014 c 0.152 ref 0.006 ref d 1.90 2.00 2.10 0.0 75 0.0179 0.083. d1 0.85 0.95 1.05 0.033 0.037 0.041 d2 0.13 0.23 0.33 0.005 0.009 0.013 e 1.90 2.0 2.10 0.075 0.079 0.083 e1 0.90 1.00 1.10 0.035 0.039 0.043 e2 0.72 0.82 0.92 0.028 0.032 0.036 e 0.65 bsc 0.026 bsc k 0.20 bsc 0.008 bsc k1 0.25 bsc 0.01 0 bsc k2 0.33 bsc 0.013 bsc k3 0.22 bsc 0.009 bsc k4 0.40 bsc 0.016 bsc k5 0.20 bsc 0.008 bsc l 0.25 0.30 0.35 0.010 0.012 0.014
ace 14 21 m p - channel 2 0 - v mosfet ver 1.1 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety o r effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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